103年上學期 電子顯微鏡學

星期五 上午09:10-12:20 工綜B03室

Office E-mail
Instructor 薛景中 中研院應科中心411B shyue at gate.sinica.edu.tw
TA 高偉倫 中研院應科中心407C d03527008 at ntu.edu.tw
Textbook D.B. Williams and C.B. Carter, Transmission Electron Microscopy, 2009 (2nd Edition), Springer
Website http://www.shyue.idv.tw/teaching.html
Workload Homework 4 in total 10% each 40%
Mid-term exam 30% 30%
Final exam 30% 30%
Total* 100%
* If the final class average falls below 70%, a curved scale will be used, with the class average set at or near 78%.

Homework policies:

Homework will be due in class at the second class meeting after it is assigned. Late homework will be subject to a penalty of 10% per day unless an extension has been arranged with the instructor prior to the due date. No late homework will be accepted after a solution set has been made available.
Homework must be legible, with questions answered in numerical order, and stapled if more than one page long. Please: no spiral-bound paper, or pages connected by folding the corners. Students may consult with one another on the homework, but what is handed in must be each student's original, individual work. Homework assignments (or portions thereof) from different students that appear to have been copied or that otherwise appear to be identical may be returned to all the submitters with zero credit.
The purpose of the homework is to illustrate, apply, and reinforce key topics, not to serve as dry runs for the tests.

Tests and Exams:

Students may bring pencils or pens, erasers, and straight edges to the tests. The tests and final exam will be closed-book, closed-notes. No formula sheets or any other forms of stored information are permitted. Each test will cover the lectures and reading assignments from the preceding third of the course. The final exam will cover material from throughout the course. Some of the test questions will be similar to the homework problems in style (i.e., short-answer; calculations; explanations of concepts), but some questions will require the student to apply previous material to new situations.

Syllabus

Lecture topics, readings, and dates of homework assignments are subject to change. Tests will cover the lecture content and the reading assignments.
Week Date Lecture Topic Homework
1 9/19 Introduction [quicktime version]
slides updated on 13/02/05
2 9/26 Instrumentation and Sample Preparation [quicktime version]
slides updated on 13/05/20
3 10/3 Electron-Atom Interactions [quicktime version]
slides updated on 14/10/15
4 10/10 Holiday
5 10/17 Scanning Electron Microscopy [quicktime version]
slides updated on 14/10/15
#1 assigned
6 10/24 Electron Probe Microanalysis (EPMA) [quicktime version]
slides updated on 13/02/04
#1 due
7 10/31 Diffraction [quicktime version]
slides updated on 11/10/31
#2 asigned
8 11/7 Diffraction Patterns [quicktime version]
slides updated on 14/10/18
#2 due
9 11/14 Mid-term exam
10 11/21 Contrast and Imaging [quicktime version]
slides updated on 13/05/15
11 11/28 Imaging Defects [quicktime version]
slides updated on 13/04/19
12 12/5 High-Resolution TEM [quicktime version]
slides updated on 13/05/15
13 12/12 Simulation [quicktime version]
slides updated on 11/03/03
#3 assigned
14 12/19 Analytical TEM (XEDS and EELS) [quicktime version]
slides updated on 13/02/05
#3 due
15 12/26 Energy Filtered TEM [quicktime version]
slides updated on 13/02/05
16 1/2 Scanning TEM [quicktime version] and special topics [quicktime version]
slides updated on 13/05/15
#4 assigned
17 1/9 Review #4 due
18 1/16 Final Exam

Rubric

 

Excellent

Satisfactory

Needs work

General Microscopy

Importance of resolution

  • Abbe Theory
  • Determined by wavelength
  • Electron propagate like waves
  • Magnification is only meaningful with sufficient resolution

None of the above

General crystal structure

  • Space group and point group
  • Microscopic and macroscopic symmetry
  • Zone axis
  • Index of plane and direction
  • Reciprocal lattice

None of the above

Instruments

Role of each component

  • Function of each lens and difference in operation modes
  • Effect of accelerating voltage
  • Aberration of real lens and limitation of resolution
  • Different types of electron source
  • Image rotations associated with focal length of lens

None of the above

Sample preparation

Scanning Electron Microscopy

  • Choice of sample mount
  • Effect of conductive overcoat

None of the above

Transmission Electron Microscopy

  • Choice of different techniques for different type of specimen
  • Post-cleaning of specimen
  • Application of Focused Ion Beam
  • Choice of different supporting film

None of the above

Electron-Atom Interactions

  • Scattering cross-section
  • Interaction volumes
  • Signals from electro-atom interactions
  • Elastic and inelastic scattering
  • Forward and back-scattering
  • Single and multiple scattering

None of the above

Scanning Electron Microscopy

General SEM

  • Magnification and raster size
  • Resolution limitation
  • Operation modes for objective lens
  • Signal generation
  • Depth of focus
  • Resolution vs, current
  • Kinetic energy of electrons

None of the above

SE and BSE imaging

  • Yield of SE and BSE
  • Low-vacuum and environmental SEM
  • Effect of instrumental parameters on the image
  • Signal processing
  • Classification of SE
  • Contrast in SE and BSE imaging
  • Operation of detectors

None of the above

Advanced operation

  • Electron backscatter diffraction
  • Auger electron spectrometry
  • Channeling pattern
  • EBIC
  • CL

None of the above

Electron Probe Microanalysis

General EPMA

  • Inner-shell ionization
  • X-ray fluorescence yield
  • Interaction volume (lateral and depth distribution)
  • Effect of beam energy
  • Quantitative analysis (ZAF correction)
  • Characteristic x-ray and bremsstrahlung
  • Selection rule of x-ray generation
  • Qualitative analysis
  • Accuracy of standard-less quantification
  • X-ray imaging

None of the above

X-ray wavelength dispersive spectroscopy

  • Selecting crystals for XWDS
  • Fully focused x-ray spectrometer
  • Maximizing signal intensity

None of the above

X-ray energy dispersive spectroscopy

  • Principle of Si(Li) and SDD
  • Processing time and dead time ratio
  • Principle of pulse processing
  • Role of collimater
  • Detection solid angle
  • Energy resolution of XEDS
  • Artifacts in XEDS

None of the above

Diffraction

General diffraction

  • Fresnel and Fraunhofer diffraction
  • Electron vs. x-ray diffraction
  • Structure factor
  • Properties of scattering vector
  • Electron waves and diffraction
  • Atom form factor
  • Bragg condition
  • Laue equation
  • Vector form of diffraction conditions
  • Ewald construction

None of the above

Diffraction in TEM

  • Ewald construction for TEM
  • Interpretation of TEM diffraction
  • Lattice factor
  • Excitation error
  • Laun zones

None of the above

Diffraction Patterns

Parallel beam electron diffraction

  • Determine the zone axis
  • Effect of inelastic scattering
  • Kikuchi lines and excitation error
  • Dynamical and kinematical diffraction
  • Camera length
  • Indexing of diffraction pattern
  • Ring pattern
  • Kikuchi lines and maps
  • Extinction distance
  • Double diffraction

None of the above

Convergent beam electron diffraction

  • Excess and deficiency lines
  • High order Laue zone lines
  • Determination of space groups
  • Information provided by CBED
  • Microscope variables
  • Determination of point groups

None of the above

Imaging

General

  • Rotation between image and diffraction pattern
  • Mass-thickness contrast
  • Diffraction contrast
  • Phase contrast
  • Image recording on emulsion/CCD/CMOS
  • Contrast generation in TEM
  • BF/DF imaging
  • Two-beam condition
  • Artifacts in image

None of the above

Imaging defects

  • Imaging stacking faults
  • Imaging dislocations
  • Weal-beam dark-field imaging
  • Fresnel contrast
  • Visibility of lattice defects
  • Imaging coherent particles
  • Interference pattern (lattice fringe)
  • Moiré pattern

None of the above

High-resolution electron microscopy

  • Wave function at backfocal plane
  • Wave function at imaging plane
  • Weak phase object
  • Point resolution and information limit
  • Partial coherence
  • Definition of HREM
  • Contrast generation
  • Spatial frequency
  • Transfer function
  • Contrast transfer function
  • Scherzer defocus
  • Damping of CTF

None of the above

Simulation

  • Applications of diffractogram
  • Fourier filtering
  • Electron holography
  • Exit-wave reconstruction
  • Multislice method
  • Bloch wave method
  • Diffractogram
  • Linear and non-linear image formation

None of the above

Analytical TEM

Inelastic scattering

  • Different types of inelastic scattering
  • Shell excitation
  • Plasmon, phonon
  • Continuous energy loss

None of the above

XEDS

  • Quantitative analysis
  • Ge detector
  • Position for XEDS detector

None of the above

Electron energy loss spectrometry

  • Parameters characterizing EELS
  • EELS in image and diffraction mode
  • Inner-shell ionization: ELNES and EXELFS
  • Quantitative EELS: partial ionization cross-section
  • Background substraction
  • Hardware requirement
  • Zero-loss peak
  • Low-loss region
  • High-loss region
  • Shape of adsorption edge
  • EELS vs XEDS
  • Qualitative EELS

None of the above

Energy filtered TEM

  • Energy-filtered diffraction
  • Two- and three-window technique
  • Electron tomography
  • Zero-loss filtering
  • Electron-spectroscopic imaging
  • Detection limit and spatial resolution of ESI

None of the above

Scanning TEM

  • STEM imaging techniques
  • Reciprocity theorem
  • HAADF imaging
  • STEM vs. TEM vs. SEM
  • STEM detectors
  • Effect of scattering angle (camera length)

None of the above